Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Materials and devices for quantum technology I

HL 17.5: Talk

Monday, March 16, 2020, 16:00–16:15, POT 112

Laser-assisted local metalorganic vapor phase epitaxy of (Al,Ga)As layers — •Max Trippel, Jürgen Bläsing, Matthias Wieneke, Armin Dadgar, and Andrè Strittmatter — Institut für Physik, Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

Up to now, an unsolved problem of integration between Si and III/V semiconductor materials is the misfit between optimum III/V growth conditions and Si electronics. We propose laser-assisted local III/V epitaxy based on metalorganic vapor phase epitaxy (MOVPE) to resolve the growth-temperature related incompatibility of both worlds. (Al,Ga)As/GaAs(001) and (Al,Ga)As/Si(111) have been investigated first study to mark the differences to full-wafer growth on planar substrates. Our custom made epitaxy system comprises a conventional gas mixing cabinet, a stainless-steel vertical growth reactor, a xyz-movable substrate holder and a temperature-controlled laser-heater. Pyrometric temperature measurement is done in the center of the laser spot being as small as 150 µm in diameter. Initial experiments were devoted to find conditions for epitaxial growth with planar top surfaces. With a 200 µm diameter Gaussian-like laser intensity profile on the substrate surface, circular growth areas of 50-150 µm are obtained for a focal plane position of the substrate. A narrow temperature window exists in which planar growth fronts evolve in the center of the mesa. Below this temperature window, only convex growth fronts appear while above a more complex cross-section of the growth front is observed. Epitaxial growth of AlAs mesas on GaAs substrates is demonstrated.