Dresden 2020 – wissenschaftliches Programm
Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 17: Materials and devices for quantum technology I
HL 17.8: Vortrag
Montag, 16. März 2020, 17:15–17:30, POT 112
Data storage with irradiation-induced defects in SiC — •M. Hollenbach1,2, C. Kasper3, D. Poprygin3, H. Kraus4, G. Hlawacek1, Y. Berencén1, W. Kada5, T. Ohshima6, V. Dyakonov3, and G.V. Astakhov1,3 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research,Dresden — 2Technische Universität Dresden,Dresden — 3Julius-Maximilians-Universität Würzburg, Experimental Physics VI,Würzburg — 4Jet Propulsion Laboratory, California Institute of Technology,Pasadena — 5Gunma University,Kiryu — 6National Institutes for Quantum and Radiological Science andTechnology,Takasaki
The demand for reducing cost and increasing capacities of storing data has led to a continuous improvement of current technologies such as hard disk drives. One of the disadvantages of the present digital media is the limited life span up to 100 years. However, SiC, as a host material for atomic-scale spin centers, especially the Si vacancy, is a promising approach to overcome this limitation. Due to their intrinsic stability, these centers hold promises for next generation long-term data storing. Here, we show the controlled generation of defects by using either focused H+ or He+ irradiation. The depth of the defect-rich layer and the number of created luminescent sites are controlled by the energy and the fluence of the ion beam. We demonstrate three dimensional- and multi-bit coding in SiC by using He ions for the writing process. To read out the written defects, a confocal microscope is used. Annealing experiments allowed us to estimate the defect stability to be far above 100 years.