Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Perovskite and photovoltaics I (joint session HL/CPP)
HL 25.1: Talk
Tuesday, March 17, 2020, 09:30–09:45, POT 251
Properties of In2S3:V epitaxially grown on p-Si for Intermediate Band Solar Cell Applications — •Tanja Jawinski1, Michael Lorenz1, Roland Scheer2, Marius Grundmann1, and Holger von Wenckstern1 — 1Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Germany — 2Martin-Luther-Universität Halle-Wittenberg, Institut für Physik, Germany
The Shockley Queisser limit of single junction solar cells can be overcome by introducing an intermediate band (IB) in wide band gap materials. Thus thermalization losses can be reduced [1]. Furthermore sub-bandgap photons can be absorped by valence band to IB and IB to conduction band transitions. According to theoretical calculations In2S3 hyper-doped with vanadium is a suitable candidate to realize such an IB solar cell [2].
Undoped and V-doped In2S3 layers are epitaxially grown by physical co-evaporation of the elements on p-type Si wafers. Using a combinatorial approach, we can cover a wide range of doping concentrations of up to 14 at-% V. Heterostructure pin solar cells are completed using n-ZnO:Al grown by pulsed laser deposition as transparent top electrode. Improved structural properties can be attributed to the epitaxial growth mechanism even for V-doped samples. We compare diode and solar cell parameters of undoped and V-doped sample by analyzing dark and illuminated current-voltage characteristics. Furthermore we use thermal admittance spectroscopy to investigate defect states, that are induced by V-doping. [1] Luque and Martí, Phys. Rev. Lett., 1997, 78, 5014. [2] Palacios et al., Phys. Rev. Lett., 2008, 101, 046403.