Dresden 2020 – wissenschaftliches Programm
Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 29: 2D Materials III: Growth and Heterostructures (joint session O/HL)
HL 29.1: Vortrag
Dienstag, 17. März 2020, 10:30–10:45, GER 38
High structural and optical quality of transition metal dichalcogenides grown by chemical vapor deposition — •Antony George1, Shivangi Shree2, Tibor Lehnert3, Christof Neumann1, Meryam Benelajla2, Cedric Robert2, Xavier Marie2, Kenji Watanabe4, Takashi Taniguchi4, Ute Kaiser3, Bernhard Urbaszek2, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743 Jena, Germany — 2Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France — 3Ulm University, Central Facility of Materials Science Electron Microscopy, D-89081 Ulm, Germany — 4National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
We have achieved highly reproducible large area growth of high-quality monolayer transition metal dichalcogenides (TMDs) by our modified chemical vapor deposition (CVD) process. We correlate the structure of our CVD grown MoS2 monolayers studied by high-resolution transmission electron microscopy (HRTEM) with the optical quality revealed in temperature dependent optical spectroscopy. We determine a defect concentration of the order of 1013 cm−2 for our samples with HRTEM. We show optical transition linewidth of 5 meV at low temperature (T = 4 K) for the free excitons in emission and absorption after encapsulation in hBN. This is comparable to the best monolayer samples obtained by mechanical exfoliation of bulk material.