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HL: Fachverband Halbleiterphysik
HL 29: 2D Materials III: Growth and Heterostructures (joint session O/HL)
HL 29.5: Vortrag
Dienstag, 17. März 2020, 11:30–11:45, GER 38
Growth of Hexagonal Boron Nitride and Borophene on Ir(111) via Thermal Catalytic Decomposition of Borazine (B3H6N3) — •Karim Omambac1, Marko Kriegel1, Christian Brand1, Pascal Dreher1, David Janoschka1, Ulrich Hagemann2, Nils Hartmann2, Frank-Joachim Meyer zu Heringdor1,2, and Michael Horn-von Hoegen1 — 1University of Duisburg-Essen, Germany — 2Interdisciplinary Center for the Analytics on the Nanoscale (ICAN), Germany
Preparation of borophene has been performed by deposition from an e-beam heated high-purity boron rod via molecular beam epitaxy (MBE) [1]. However, the MBE technique is very expensive with low yield and most of all, epitaxially grown borophene islands are found small sized. Here we report on the first successful growth of large area borophene via the thermal catalytic decomposition of borazine (B3H6N3) on a Ir(111) substrate at high temperatures using conventional CVD technique. The observed growth mode is describe to be similar with boron dissolving into the bulk at high temperatures and segregating to the surface forming large borophene sheets as the sample is cooled [1]. The surface morphology and structure determination has been performed in-situ by real-time growth observation via low energy electron microscopy (LEEM) and high-resolution spot profile analyzing-LEED (SPA-LEED). The chemical composition has been determined ex-situ by X-ray photoemission spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. [1] ACS Nano 13, 3816-3822 (2019)