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HL: Fachverband Halbleiterphysik
HL 29: 2D Materials III: Growth and Heterostructures (joint session O/HL)
HL 29.9: Vortrag
Dienstag, 17. März 2020, 12:30–12:45, GER 38
MoSe2-WSe2 lateral heterostructures grown by chemical vapour deposition — •Emad Najafidehaghani1, Antony George1, Ziyang Gan1, Tibor Lehnert2, Christof Neumann1, Xingcheng Li1, Ute Kaiser2, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, D-07743 Jena, Germany — 2Ulm University, Central Facility of Materials Science Electron Microscopy, D-89081 Ulm, Germany
Recently two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2, WS2, WSe2, MoSe2 etc. attracted great research interest due to their superior electronic and optical properties. They are identified as promising candidates for applications such as ultrathin, transparent and flexible electronics, optoelectronics and sensing. In order to realize advanced device architectures such as p-n junctions, complementary logic devices, ultrathin photovoltaics, etc. it is essential to develop efficient growth strategies for combining dissimilar monolayer TMDs to form lateral heterostructures. Here we show large area growth of monolayer MoSe2 -WSe2 lateral heterostructures by our modified chemical vapour deposition (CVD) technique which uses Knudsen type effusion cells for controlled delivery of precursors [1]. The grown monolayer MoSe2-WSe2 lateral heterostructures were characterized using complementary microscopic and spectroscopic techniques such as optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Kelvin probe microscopy and high-resolution transmission electron microscopy (HRTEM) to reveal their structural and chemical quality.