Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 3: Focus: Diamond Technology and Electronics (joint session KFM/DS/HL)

HL 3.1: Invited Talk

Monday, March 16, 2020, 09:30–10:00, HSZ 105

Doped CVD diamond layers for electronic device applications: Experimental and theoretical study — •Ken Haenen — Institute for Materials Research (IMO), Hasselt University, Diepenbeek, Belgium — IMOMEC, IMEC vzw, Diepenbeek, Belgium

While diamond is considered to be the ultimate wide band gap semiconductor due to its combination of superlative properties, the full understanding of the connection between growth conditions and subsequent layer properties is still lacking. In this presentation, focus is first devoted to the deposition of heavily and lightly B-doped CVD diamond films. Employing microwave plasma enhanced CVD in combination with Ib (100)-oriented high pressure high temperature (HPHT) substrates, the influence of the [C]/[H] ratio on key material properties is presented. This includes the surface morphology, crystal quality, and electrical transport properties by employing a wide range of characterization techniques, i.e.. Hall effect in a wide temperature range, FTIR spectroscopy, Raman spectroscopy, X-ray absorption spectroscopy, XPS, AFM, optical microscopy, and transmission electron microscopy. First principles density functional calculations (DFT) were performed to model the interaction of B with the H-terminated diamond surface, corroborating the observed increase of B-doping incorporation with used methane concentration. The insight offered by the combination of experiment and theory clearly provides a pathway to more efficient doping and enhanced crystal quality. Finally, the use of said layers in Schottky barrier diodes is presented.