Dresden 2020 – scientific programme
The DPG Spring Meeting in Dresden had to be cancelled! Read more ...
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.14: Poster
Tuesday, March 17, 2020, 13:30–15:45, P3
Modification of GaAs based Heterostructures by Laser Annealing — •Hans-Georg Babin, Julian Ritzmann, Marcel Schmidt, Arne Ludwig, and Andreas D. Wieck — Ruhr-Universität Bochum, D-44780 Bochum, Germany
Ex-situ thermal processing is a crucial step in semiconductor preparation. The applications range from the healing of crystal Damage1, over the production of functional structures2 up to the subsequent manipulation of material properties3.
In addition to the obvious possibility of heating the sample in a furnace, high-intensity laser radiation can also be used for local heating of the semiconductor. This is called laser annealing.
This contribution deals with the realization of a Laser-Annealing-Setup for ex-situ modification of semiconductors. The construction and characterization will be discussed. In addition, the possibilities of laser annealing for the processing of GaAs heterostructures are estimated. The investigations include annealing of crystal damage, processing of insulating lines and alloying of ohmic contacts at GaAs/AlGaAs HEMTs. Finally, the change of the emission of quantum dots after Laser-Annealing is investigated.
1 S. D. Ferris et al.: AIP Conference Proceedings 50, 647, 1979
2 D. Bouwmeester et al.: Applied Physics Letters 95, 251104, 2009
3 L. Wang et al.: Applied Physics Letters 90, 073120, 2007