Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.15: Poster
Tuesday, March 17, 2020, 13:30–15:45, P3
Molecular Beam Epitaxy growth and epitaxial lift off of (111)B-AlAs/GaAs heterostructures — •Tobias Henksmeier, Martin Eppinger, and Dirk Reuter — Department of Physics, Paderborn University, Warburgerstr. 100, 33098 Paderborn, Germany
In the recent years second harmonic generation (SHG) in nanoparticles has gained much interest as a platform for nonlinear optics. Thin (111)-GaAs films transferred to transparent substrates exhibit efficient forward directionality emission while for (100)-GaAs there is a strong pump pulse polarization dependence hindering efficient SHG emission perpendicular to the surface. We present the molecular beam epitaxy growth of AlxGa1−xAs heterostructures (0<x<1) on (111)B-GaAs substrates with a 1∘ miscut towards (211) and the fabrication of thin (111)B-GaAs films on arbitrary substrates via epitaxial lift off. We obtained similar growth rates on the (111)B surface as on the standard (100) surface. First, (111)B-AlxGa1−xAs (x>0.7) sacrificial layers were grown; then these layers were overgrown by a thin (111)B-GaAs layer. Surface roughness was investigated by atomic force microscopy (AFM). With optimized growth parameters a roughness <1 nm was obtained. 4× 4 mm samples cleaved from the wafer were submerged in hydrofluoric acid to perform the epitaxial lift off of the GaAs layer. The etch rate of approximately 100µm/h is similar to those of (100)-AlxGa1−xAs (0<x<1) and will be discussed in detail. The released GaAs layer is bonded to a glass substrate. The film roughness <1 nm of the bonded GaAs was measured by AFM and the optical quality was checked by photoluminescence measurements.