Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.16: Poster
Tuesday, March 17, 2020, 13:30–15:45, P3
Charge transport in graphene, encapsulated by hexagonal boron nitride, as a field effect transistor device — •Leo Schnitzspan1, Alexander Tries1,2,3, Marie-Luise Braatz1,2, and Mathias Kläui1,2 — 1Institut für Physik, Johannes Gutenberg Universität Mainz — 2Graduate School of Excellence Materials Science in Mainz — 3Max Planck Institute for Polymer Research
Two dimensional van der Waals-materials with conducting, insulating or ferromagnetic properties attract attention due to their extraordinary charge- and spin-transport characteristics and their simple realization by stamping 2D layers one above the other. This can be accomplished by means of a dry transfer method [1]. This method was further developed in order to transfer hexagonal boron nitride (hBN) and graphene, to achieve a hBN/graphene/hBN heterostructure device. With electron beam-lithography (EBL), electrodes were patterned such that the temperature dependent charge transport and magnetoresistance could be measured. The data analysis showed a high charge carrier mobility and a non-negligible impact of the interface between electrode leads and graphene. In addition, Shubnikov-de Haas oscillations were observed at temperatures of 2 K, which allow the extraction of the carrier concentration in graphene.
[1] Zomer, P. J., et al., Appl. Phys. Lett. 105, 013101 (2014).