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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.19: Poster

Dienstag, 17. März 2020, 13:30–15:45, P3

Focused ion beam implantation of rare-earth ions in semiconductor nanostructures — •Christian Düputell¹, Arne Ludwig¹, Jörg Debus², Manfred Bayer², and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum — ²Experimentelle Physik 2, Technische Universität Dortmund

We report on focused ion beam (FIB) implantation of rare-earth ions in semiconductor nanostructures. Semiconductor nanostructures have attracted a lot of attention due to their unique optical, electrical and mechanical properties. There is a huge potential for applications in many fields. To use nanostructures for a certain purpose, often very specific properties have to be achieved. An elegant method to tune the electrical and optical properties of semiconductor nanostructures is focused ion beam implantation. Using ion beams offers high-resolution lateral engineering, local band gap modulation due to ion-induced intermixing as well as local doping applications. To carry out implantation of rare-earth ions in semiconductor nanostructures we especially focus on the incorporation of Erbium ions into GaAs. Erbium and rare-earth ions, in general, are known for their huge magnetic moments, which exceed the Bohr magneton of at least a factor of 7. The dominant part of this magnetism originates from the 4f magnetic moments. Not only the f- but also d-states can participate in spin interactions so that we are going to obtain a rich spectrum of possible spin coupling processes in our studies. Therefore, we also examine the influence of annealing processes and the dependence on the ion fluence.