Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.1: Poster

Dienstag, 17. März 2020, 13:30–15:45, P3

Towards Sustainable, Flexible Electronics from Abundant Elements: Integrated Circuits Comprising TFTs Based on Amorphous Room-Temperature-Fabricated Zinc-Tin-Oxide — •Oliver Lahr, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany

During the last decade, amorphous oxide semiconductors have advanced into a thriving research area for transparent and flexible electronics and since then, the field has grown rapidly towards, for instance, next-generation flat-panel displays. The widely commercially deployed and by far most mature representative indium-gallium-zinc-oxide, however, consists of rare elements such as indium and gallium that innovative research is attempting to substitute by materials containing abundant cations only.
Amorphous zinc-tin-oxide (ZTO) turns out to be a suitable candidate for sustainable, flexible and transparent electronics since it consists of abundant, non-toxic elements and exhibits promising performance even in case of room temperature fabricated circuits comprising MESFETs and JFETs [1,2]. Since previously reported TFTs relied on high-temperature processed ZTO channels, we report the first ZTO-based TFTs that neither require deposition at elevated temperature nor additional annealing in order to maintain compatibility with flexible substrates, while still representing current state-of-the-art devices.
[1] Lahr, IEEE Trans. Electron Devices, 66, 8, 2019.
[2] Lahr, Adv. Electron. Mater., 1900548, 2019.