Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.20: Poster

Tuesday, March 17, 2020, 13:30–15:45, P3

Correlation of optical properties and interface morphology in type-II semiconductor heterostructures — •Luise Rost, Milan Maradiya, Jannick Lehr, Wolfgang Stolz, and Wolfram Heimbrodt — Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Germany

The (Ga,In)As/GaAs/Ga(As,Sb) material system is used for lasers operating over a wide spectral range in the infrared. To further optimize the design of such heterostructures, it is important to have deep understanding of the influence of the interface morphology and the charge carrier dynamic through the interface. Here (Ga,In)As/GaAs/Ga(As,Sb) type-II double quantum well heterostructures and the inverted structure have been grown by metall-organic vapor phase epitaxy. A growth interruption procedure was used to intentionally modify the morphology of the internal interfaces. Here we show a furrow investigation of the influence of interface morphology and optical properties, for this 0s, 10s and 120s growth interruptions were introduced on different places of the heterostructure. With photoluminescence spectroscopy and atomic force microscopy we will illustrate this correlation and its importance for laser performance.