Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.28: Poster

Tuesday, March 17, 2020, 13:30–15:45, P3

A study of ultrathin c-plane GaInN/GaN quantum wells and discs grown by MBE — •André Schendel, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institut für Angewandte Physik, Technische Universität Braunschweig

In this contribution we present our study of ultrathin c-plane GaInN/GaN quantum wells (QWs) and incomplete quantum wells (discs) grown by molecular beam epitaxy (MBE) in terms of morphology and composition homogeneity. The ternary semiconductor GaInN offers many opportunities for applications as optoelectronic devices with its direct band gap tunable between 0.65 eV for InN and 3.42 eV for GaN. Nowadays, especially green emitting LED’s are in the focus of research, because there is no high efficient green emitting LED available yet for any kind of material. Theoretically, GaInN should be able to close this gap, but in practice the In-content can hardly be increased above 30% if it is grown on GaN. Additionally, the emissivity in the green spectral range is very low due to increased defect formation which is caused by the increased lattice mismatch between the two material systems with increasing In-content. In this study, the growth process of GaInN with low and high In-content is investigated in terms of morphology and composition homogeneity by varying the growth parameters material fluxes and growth temperature to get a better understanding of the impact of the single parameters.