Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.2: Poster
Tuesday, March 17, 2020, 13:30–15:45, P3
Effect of plasma treatment on electronic devices based on In2O3 — •Fabian Schöppach, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstraße 5, 04103 Leipzig, Germany
Indium oxide (In2O3) has promising physical properties such as high conductivity and transparency in the visible. However, In2O3 is not used in active devices such as diodes or transistors yet. This is due to its tendency to form an electron accumulation layer on its surface which is reported to be caused by surface near oxygen vacancies [1]. Compensating Mg doping and plasma treatment are reported to reduce this effect and enable the resulting device operation [2,3].
In this work, the performance of first prototype metal-semiconductor field-effect transistors (MESFETs) based on In2O3 thin films was improved by an initial plasma treatment of the channel material. The thin films were grown via pulsed laser deposition and were treated afterwards with a pure oxygen plasma. For source and drain contacts gold was deposited via inert ambient sputtering. Schottky gate diodes were fabricated in a reactive sputter process, which is a requirement for obtaining rectifying contacts to In2O3 [5,6].
[1] King, et al. Physical Review B 80.8, 081201 (2009)
[2] Schmidt, et al. physica status solidi (b) 252.10, 2304-2308 (2015)
[3] Michel, et al. ACS Appl. Mater. Interf. 11, 27073-27087 (2019)
[4] von Wenckstern, et al. APL Materials 2.4, 046104 (2014)
[5] Schultz, et al. Phys. Rev. Appl. 9, 064001 (2018)