Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.32: Poster

Tuesday, March 17, 2020, 13:30–15:45, P3

Gating technologies for bilayer 2D carrier systems — •Jana Marie Meyer¹, Jan Scharnetzky², Simon Parolo², Christian Reichl², Werner Dietsche², Werner Wegscheider², Lars Tiemann¹, and Robert Blick¹ — ¹Center for Hybrid Nanostructures, University of Hamburg, 22761, Germany — ²ETH Zürich, 8092 Zürich, Switzerland

Electrostatic gating is a versatile and crucial tool in nanotechnology and allows to change the intrinsic electron density of two-dimensional carrier systems, that is given by doping in the growth process. Bilayer systems like gallium arsenide double quantum wells can be electrically separated and the electron density of each layer can be tuned independently with a sophisticated system of patterned back gates and metallic top gates. To achieve a higher sample quality, the back gates are patterned via ion implantation before the overgrowth of the double layer system allowing also a low charge carrier concentration. This versatile technology is can be applied to generate confinement potentials, tune the carrier concentration and study a variety of quantum phenomena.