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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.33: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Quantum Hall Effect in Bulk-insulating Sn-doped Bi1.1Sb0.9Te2S Topological Insulators — •Dingxun Fan, Yongjian Wang, and Yoichi Ando — II. Physikalisches Institut, Universität zu Köln, Zülpicher Str. 77, D-50937 Köln, Deutschland
Realization of bulk-insulating materials is among the central tasks of the research efforts in the past decade in the field of topological insulators (TIs). To better address the intriguing properties of the topological surface states, it is desired to have a TI platform with a single Dirac cone well isolated from the bulk bands.
We have grown Sn-doped Bi1.1Sb0.9Te2S topological insulator single crystals by a modified Bridgman method. Transport characterization on these crystals shows large low temperature bulk resistivity, low bulk carrier density, and clear Shubnikov-de Haas oscillations from the surface state. We also observed the integer quantum Hall effect in dual-gated Hall bar devices fabricated from exfoliated thin flakes. Efforts of proximitizing the surface state by superconducting contacts will also be shown.