Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.38: Poster
Tuesday, March 17, 2020, 13:30–15:45, P3
Creation of a shallow graphitic layer in diamond for field effect applications — •Dennis Oing, Martin Geller, Axel Lorke, and Nicolas Wöhrl — Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany
Diamond is a promising wide band gap semiconductor with high hole and electron mobilities, high electric breakdown field and the highest thermal conductivity.
However, a field effect transistors based on the surface conductivity of the two-dimensional hole gas need a dielectric material, e.g. Al2O3, between the diamond surface and the gate. However, these materials have a lower electric breakdown field and lower thermal conductivity. Hence, transistors using these materials lack the potential that transistors solely made from diamond possess.
In this contribution, graphitic layers as bottom-gate below the two-dimensional hole gas were produced 100 nm below the diamond surface by ion implantation. Implantation was done on CVD-grown single crystal layers using 12C-ions with a kinetic energy of 95 keV. The samples were subsequently annealed from 210∘ up to 650∘ to form the graphitic layers. The produced layers were characterized using Raman spectroscopy and measuring IV-characteristics.
Raman spectroscopy reveals that after implantation a small G-peak appears. Additionally, a D-peak can be observed after annealing. These peaks correspond to the formation of amorphous carbon layers. Our results suggest that the created structures can be used for field effect applications.