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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.41: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Electroluminescence emission in a GaAsSb resonant tunneling diode with emitter prewell — •Edgar David Guarin Castro1, Edson Cardozo de Oliveira1, Andreas Pfenning2, Fabian Hartmann2, Lukas Worschech2, Sven Höfling2,3, Gilmar Marques1, Marcio Daldin Teodoro1, and Victor Lopez-Richard1 — 1Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP, Brazil — 2Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 3SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, United Kingdom
We study the electroluminescence (EL) emission of an n-type GaSb resonant tunneling diode with pseudomorphically grown ternary GaAs0.05Sb0.95 emitter prewell and quantum well. Emission peaks are observed along to the spectral range of 1.1 µm to 1.6 µm. We attribute the radiative recombination to the generation of holes via impact ionization processes. Comparing EL and photoluminescence (PL) emissions, we observe a high EL on-off-ratio which is one order of magnitude greater than the PL on-off-ratio. The larger EL on-off ratio correlates with the coherent current channel. To understand the carrier dynamics inside the quantum well, we characterize the carrier lifetimes using Time-resolved Photoluminescence spectroscopy. We demonstrate the existence of different carrier relaxation processes, unveiled under different current conditions.