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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.43: Poster

Dienstag, 17. März 2020, 13:30–15:45, P3

Schottky junctions on GeSn bottom-up grown nanowires by Nickel-stanogermanidation via flash-lamp annealing — •Shima Jazavandy Ghamsari, Artur Erbe, and Yordan M. Georgiev — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, 01328 Dresden, Germany

Direct bandgap was achieved in Ge by introducing high contents of Sn (>6%) [1]. GeSn was also predicted to exhibit high carriers* mobilities, making it an ideal material for co-integration of optoelectronic and high-speed electronic devices. Moreover, GeSn nanowires can add the gate-all-around benefit in efficient electrostatic control of FET device channels. Beside the large body of data on GeSn thin films growth, the number of reports on growth of GeSn nanowires with significant Sn incorporation is very limited. Silicon and germanium metal alloys were widely studied for low-resistance contacts. For GeSn thin films, however, there are only few studies on Ni and NiPt stanogermanides (NiGeSn and NiPtGeSn). In this work, the benefits of flash-lamp annealing were used for producing Schottky junctions on GeSn bottom-up grown nanowires [2], to overcome the thermal budget limitations because of the low Sn melting point. [1] S. Gupta et al., J. Appl. Phys. 113, 073707 (2013). [2] S. Biswas et al. Nat Commun. 7, 11405 (2016).