Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster I

HL 30.7: Poster

Tuesday, March 17, 2020, 13:30–15:45, P3

Vertical field-effect transistors based on amorphous zinc-tin oxide - simulation and fabrication — •Michael Bar, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Germany

Zinc-tin oxide (ZTO) is a wide gap semiconductor consisting of abundant, non-toxic elements. It unites transparency in the visible spectral range with high electron mobility in the amorphous state. Its deposition at room temperature has been proven successful for numerous device applications [1-3]. However, a greatly reduced channel length is needed for the fabrication of TFTs with high-frequency switching capabilities.
In this work a vertical device structure approach was used to fabricate vertical field-effect transistors (VFETs) with channel lengths of several hundred nanometers and without the use of submicrometer lithography equipment. Additionally, a finite element method has been used to simulate said devices. The static and dynamic properties obtained by transfer characteristics and drain-current modulation measurements were evaluated and compared to conventional lateral field-effect transistors. In this comparison the simulation of VFETs showed an increase in cut-off frequency of up to three orders of magnitude.

[1] S. Vogt et al., Appl. Phys. Lett., 113(13), 133501, (2018).

[2] O. Lahr et al., IEEE Trans. Electron Devices, 66(8), 3376, (2019).

[3] O. Lahr et al., Adv. Electron. Mater., 1900548, (2019).