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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.9: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Towards Thermal Conductivity measurements in β-Ga2O3 Thin Films — •Robin Ahrling1, Martin Handwerg1, Olivio Chiatti1, Rüdiger Mitdank1, Zbigniew Galazka2, Günter Wagner2, Andreas Popp2, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Leibniz Institute for Crystal Growth, 12489 Berlin Germany
As a wide-band gap semiconductor with a high breakthrough field, gallium oxide (Ga2O3) has shown to be a promising material for applications in high power electronics. However, due to the materials low thermal conductivity [1,2] heat dissipation may pose a threat for future device applications. Therefore, the thermal transport in Ga2O3 films needs to be explored. Electrical measurements have shown, that in very thin films the scattering processes change drastically with decreasing film thickness. [3] In this work, we investigate the thermal conductivity in these thin films, using the 3-ω method.
A variation of the 3-ω method with sub µm heater widths, causing the heaters to be thinner than the thickness of the examined films, is used. The heaters are produced by electron beam lithography.
We investigate the thermal conductivity in dependence of temperature and the thickness of the Ga2O3 films with a special interest in changes in the the phonon transport machanisms in very thin films.
[1] M. Handwerg et al., Semicond. Sci. Technol. 30 (2015) 024006
[2] M. Handwerg et al., Semicond. Sci. Technol. 31 (2016) 125006
[3] R. Ahrling et al., Sci. Rep. 9, 13149 (2019).