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HL: Fachverband Halbleiterphysik
HL 35: Perovskite and photovoltaics II (joint session HL/CPP)
HL 35.6: Vortrag
Dienstag, 17. März 2020, 15:15–15:30, POT 251
Reduction of s-shape formation induced by transparent top-contact sputter deposition in Perovskite solar cells — •Marlene Härtel1,2, Ruslan Muydinov1, Steve Albrecht1,2, and Bernd Szyszka1,2 — 1Technische Universität, Berlin, Deutschland — 2Helmholtz-Zentrum, Berlin, Deutschland
Depositing transparent top electrodes in Perovskite tandem solar cells without adequate buffer layers leads to damaging of the sensitive organic charge transport layers (CTL), due to harsh conditions during the sputter process. However, commonly used buffer layers utilize thermal atomic layer deposition, which is time consuming and could induce reactions with moisture. Therefore, direct sputter deposition is preferred, but sputter damage is mirrored in an s-shaped current-voltage characteristic, accompanied by a fill factor loss. In this contribution, the origin of the s-shape is analyzed by employing photoluminescence, and intensity and temperature dependent current-voltage measurement, and identified as an energetic barrier, which is formed at the CTL. The findings are supported by electrical simulations based on SCAPS. Moreover, two different sputter deposition techniques, namely radio-frequency magnetron and hollow cathode gas flow sputtering, are implemented and compared with regard to their application in damage-free sputter-deposition. By varying sputter process conditions, such as the power, or sample to target position, the s-shape in the solar cell devices can be reduced, thereby improving their electrical performance. Sputter damage-free TCO deposition allows for future enhancements in tandem device fabrication and their commercialization.