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HL: Fachverband Halbleiterphysik
HL 40: Thermal, acoustic and transport properties
HL 40.1: Vortrag
Mittwoch, 18. März 2020, 09:30–09:45, POT 151
Thermal stability of tellurium-hyperdoped silicon — •Mohd Saif Shaikh1,2, Mao Wang1, Zichao Li1,3, Yufang Xie1,3, Teresa Isabel Madeira2, Dietrich R.T. Zahn2, Slawomir Prucnal1, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany — 2Semiconductor Physics, Chemnitz University of Technology, 09126 Chemnitz, Germany — 3Dresden University of Technology, 01062 Dresden, Germany
Si doped with Te, a deep level impurity, at concentrations higher than the solid solubility limit (hyperdoping) was achieved by ion-implantation and nanosecond pulsed laser melting. The resulting material exhibit a strong sub-bandgap optical absorption, showing potential for room-temperature broadband infrared photodetectors. Te-hyperdoped Si is supposed to be meta-stable i.e. Te atoms tend to move out from the substitutional sites forming inactive clusters and precipitates. Here, we examine the thermal stability of Te-hyperdoped Si after furnace annealing. We conclude that the samples are stable up to 400°C for 60 minutes but at higher annealing temperatures Te-impurities tend to form clusters and the sub-bandgap optical absorption decreases. Rapid thermal annealing was also applied to Te-implanted Si and the results will be compared. Understanding the deactivation process upon thermal annealing is crucial during device fabrication steps, to maintain the satisfactory performance of devices utilizing such chalcogen hyperdoped Si structures.