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HL: Fachverband Halbleiterphysik

HL 42: Oxide semiconductors

HL 42.5: Vortrag

Mittwoch, 18. März 2020, 10:30–10:45, POT 51

Investigations on the electronic structure of strongly correlated electron system Cr-doped PrFeO3 — •Anil Kumar. and Pankaj R Sagdeo — Indian Institute of technology Indore, Indore-453552, India

High-resolution powder x-ray diffraction (SXRD), Soft x-ray absorption (SXAS) Raman and optical absorption spectroscopy (OAS) studies have been carried out to estimate the possible correlation between tolerance factor, structural bandwidth (w) , eg electron bandwidth (W) estimated from SXAS and charge transfer parameter (Δ) on one of the strongly correlated system Cr-doped PrFeO3. The present investigation suggests that tolerance factor, w and W scale in a similar fashion with Cr-doping, which infers the governance of these parameters by a common factor. The observed variation in eg electron bandwidth and has been understood in terms of variation in the Fe-O bond length and Fe-O-Fe bond angles with Cr-doping, which enhances the overlapping between Fe-O orbitals. Further, Resonant and power dependent Raman spectroscopy experiments were carried out to understand the origin of local oxygen breathing mode in the mixed Fe-Cr orthorhombic perovskite through the orbital mediated electron-phonon coupling (EPC) mechanism. Thus, by using the combination of SXAS, SXRD, Raman and OAS, a crucial information related to tolerance factor, structural bandwidth, eg electron bandwidth and Δ has been demonstrated. Additionally, present investigations strongly reveal the orbital mediated EPC is not limited to Jahn-Teller active materials and this series can be used as a model for study on orbital mediated EPC.