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HL: Fachverband Halbleiterphysik

HL 42: Oxide semiconductors

HL 42.6: Vortrag

Mittwoch, 18. März 2020, 11:15–11:30, POT 51

Highly Doped Transparent Conductive Oxides — •Alexander Koch, Jura Rensberg, Martin Hafermann, and Carsten Ronning — Institute of Solid State Physics, Friedrich-Schiller University Jena

Transparent conductive oxides have recently gained a lot of attention for applications in plasmonics and nanophotonics due to their low optical loss, metal-like behavior, tailorable optical properties, and well-established fabrication procedures. In particular, n-type doped zinc oxide (ZnO), such as gallium doped ZnO (GZO) is very attractive, because its dielectric permittivity can be engineered over a broad range from near to far IR. Here we show, that a very high doping concentrations in GZO can be reached by ion implantation and post implantation annealing treatment, where we have to face the competition between dopant activation and dopant diffusion. Furthermore, ion implantation offers the great opportunity to selectively dope ZnO by using appropriate lithography techniques. By this means, subwavelength structure elements, typically used for metasurfaces, fabrication can be formed.