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HL: Fachverband Halbleiterphysik

HL 43: 2D semiconductors and van der Waals heterostructures V (joint session HL/DS/O)

HL 43.2: Vortrag

Mittwoch, 18. März 2020, 09:45–10:00, POT 81

Twisted Bilayer Graphene Produced by Atomic Force Microscopy Techniques — •Lina Bockhorn, Lucas Gnörich, Johannes C. Rode, Christopher Belke, and Rolf J. Haug — Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany

The electronic properties of bilayer graphene strongly depend on relative orientation of the two atomic lattices. The rotational mismatch between both layers opens up a whole new field of rich physics, especially around the magic angle.
Twisted bilayer graphene can be obtained by different methods. Here, we use atomic force microscopy techniques to generate twisted bilayer graphene. A diagonal cut is applied at high contact force through a monolayer graphene. Several folds spread from the newly created edge. The self-assembled twisted bilayer graphene is separated in folds with one or two rips.
We estimate the relative orientation of twisted bilayer graphene which is prepared by folding monolayer graphene [1, 2, 3].

[1] H. Schmidt, J. C. Rode, D. Smirnov, R.J. Haug,
Nature Communications 5, 5742 (2014)
[2] J. C. Rode, D. Smirnov, C. Belke, H. Schmidt, R.J. Haug,
ANNALEN DER PHYSIK 529 (11), 1700025 (2017)
[3] J. C. Rode, D. Zhai, C. Belke, S. J. Hong, H. Schmidt, N. Sandler, R. J. Haug, 2D Materials, 6(1), 015021 (2019)