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HL: Fachverband Halbleiterphysik

HL 49: Quantum dots and wires II

HL 49.2: Vortrag

Mittwoch, 18. März 2020, 15:15–15:30, POT 151

Aligning quantum dots on non-structured surfaces using roughness modulation — •Nikolai Bart¹, Christian Dangel², Jonathan Finley², Kai Müller², Aimeric Courville³, Marcel Schmidt¹, Andreas D. Wieck¹, and Arne Ludwig¹ — ¹Ruhr-Universität Bochum, Lehrstuhl für Angewandte Festkörperphysik, Universitätsstraße 150, 44801 Bochum — ²Technische Universität München, Walter Schottky Institut, Am Coulombwall 4, 85748 Garching bei München — ³CNRS, Université Côte d'Azur, CRHEA, Rue Bernard Grégory, 06560 Valbonne, France

We present a novel approach to site selective growth of InAs/GaAs quantum dots on a smooth surface (miscut < 0.1°), without the use of ex-situ preparation of the wafer. For this, we deposit a layer of GaAs onto a (1 0 0) GaAs substrate during stopped rotation of the wafer, thereby creating a periodic modulation of the surface roughness on an atomic scale. If we deposit InAs onto this, QD nucleation is enhanced at locations of high roughness, thus creating a stripe pattern of high and low QD density. With this method, we can create stripes with periodicities between 3 and 0.3 mm and combine stripe patterns to create two-dimensional lattice patterns. Macro photoluminescence maps performed on these structures are in good agreement with simulations using a geometric approach.