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HL: Fachverband Halbleiterphysik
HL 49: Quantum dots and wires II
HL 49.6: Vortrag
Mittwoch, 18. März 2020, 16:15–16:30, POT 151
Electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots — •Petr Klenovský1,2, Elisa Maddalena Sala3,4, Petr Steindl1,5, Andrei Schliwa3, and Dieter Bimberg3,6 — 1Masaryk University, Brno, Czech Republic — 2Czech Metrology Institute, Brno, Czech Republic — 3TU Berlin, Berlin, Germany — 4EPSRC National Epitaxy Facility, The University of Sheffield, North Campus, Sheffield, United Kingdom — 5Leiden University, Leiden, Netherlands — 6Bimberg Chinese-German Center at CIOMP, Changchun, China
The electronic structure of self-assembled (InGa)(AsSb)/GaAs/GaP QDs is studied. These QD structures present an excellent example for systems exhibiting concurrently direct and indirect transitions both in real and momentum space. The structures were grown via MOVPE [1]. Our results show that they provide an easier access to applications in quantum information technology, as compared to the currently studied InGaAs/GaAs QDs. [2]. Our theoretical results are compared to and are verfied by detailed photoluminescence measurements [3]. We also compare results obtained for QDs grown on both GaP and GaAs substrates, revealing the influence of the large hydrostatic stress, particularly on valence band states, enabling the realization of the QD-Flash memory concept [1], where holes in type-II QDs act as storage units.
[1] Sala, E. M., et al., Phys. Stat. Sol. B, 1800182 (2018).
[2] Klenovsky, P., et al., Phys. Rev. B 100, 115424 (2019).
[3] Steindl, P., et al., Phys. Rev. B 100, 195407 (2019).