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HL: Fachverband Halbleiterphysik

HL 51: Semiconductor lasers I

HL 51.7: Vortrag

Mittwoch, 18. März 2020, 17:00–17:15, POT 51

Development towards AlGaInP based electrically pumped VECSELs for the red spectral range — •Michael Zimmer, Zhihua Huang, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart.

In recent years, electrically pumped vertical external-cavity surface-emitting lasers (EP-VECSELs) have been studied extensively due to their potential for miniaturization and integration applications. Based on their good beam quality and compact device size EP-VECSELs are excellent candidates for a new generation of light sources. However, in the red wavelength regime EP-VECSELs have not been realized yet. Here we present the design of an AlGaInP based EP-VECSEL aiming at an emission around 670 nm. To realize an EP-VECSEL, a homogeneous charge carrier distribution within the active region of the device and the avoidance of heat at the same place need to be targeted. Thus, we apply a combination of bottom disk contacts and a thick current spreading layer for current confinement. Growth of our proposed EP-VECSEL structure takes place by metal-organic vapor-phase epitaxy (MOVPE) on a GaAs substrate. For device fabrication, a flip-chip process including dry and wet chemical etching steps as well as the complete removal of the GaAs substrate is performed. Electroluminescence profile measurements indicate promising results of an enlarged emission area with quasi-homogenous current density distribution and tens of micrometers in diameter.