Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 52: Focus Session: Functional Metal Oxides for Novel Applications and Devices I (joint session HL/DS)

Mittwoch, 18. März 2020, 15:00–18:15, POT 81

Metal oxides exhibit a myriad of fascinating physical properties that enable a large variety of potential applications such as sensors and detectors, solar energy harvesting, transparent and potentially bendable electronics, power electronics, high-electron-mobility transisitors, memristors, topological quantum computation and so on. These functionalities typically require homo- or heteroepitaxial layers of high crystallinity with bendable amorphous semiconducting oxides as an exception. This session sets a focus on growth of bulk and thin films, experimental and theoretical investigation of their physical properties as well as fabrication and characterization of demonstrator devices.

Organizers: Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Berlin), Holger Eisele (TU Berlin), Jutta Schwarzkopf (Leibniz-Institut für Kristallzüchtung, Berlin) and Holger von Wenckstern (Universität Leipzig).

	15:00	HL 52.1	Hauptvortrag: Modulation Doping in High-Mobility Alkaline-Earth Stannates — •Bharat Jalan
	15:30	HL 52.2	Two-dimensional electron (hole) gas in BaSnO3/LaInO3 heterostructures: A first-principles study — •Wahib Aggoune, Dmitrii Nabok, and Claudia Draxl
	15:45	HL 52.3	Epitaxial growth of Lanthanum doped BaSnO3 thin films by PLD — •Reshma Ravindran, Daniel Pfützenreuter, Julian Stöver, Klaus Irmscher, and Jutta Schwarzkopf
	16:00	HL 52.4	Epitaxial growth of La doped BaSnO3 thin films by Plasma-assisted molecular beam epitaxy — •Georg Hoffmann, Martina Zupancic, Martin Albrecht, Zbigniew Galazka, and Oliver Bierwagen
	16:15		30 min. break
	16:45	HL 52.5	Hauptvortrag: Engineering of LiNbO3 films for next generation acoustic and energy harvesting applications — •Ausrine Bartasyte, Samuel Margueron, Vincent Astié, Giacomo Clementi, Mihaea Ivan, and Merieme Oubahaz
	17:15	HL 52.6	Hauptvortrag: Oxide Memristors for unified data storage and data processing — •Heidemarie Schmidt
	17:45	HL 52.7	Investigations on leakage current in epitaxial K0.5Na0.5NbO3 thin films grown by PLD — •Daniel Pfützenreuter, Julian Stöver, Klaus Irmscher, Jens Martin, and Jutta Schwarzkopf
	18:00	HL 52.8	Tuning the composition properties of SrTiO3 thin films grown by metal-organic vapor phase epitaxy (MOVPE) — •Aykut Baki, Julian Stöver, Toni Markurt, Carsten Richter, Klaus Irmscher, Martin Albrecht, and Jutta Schwarzkopf