Dresden 2020 – scientific programme

The DPG Spring Meeting in Dresden had to be cancelled! Read more ...

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 52: Focus Session: Functional Metal Oxides for Novel Applications and Devices I (joint session HL/DS)

HL 52.3: Talk

Wednesday, March 18, 2020, 15:45–16:00, POT 81

Epitaxial growth of Lanthanum doped BaSnO3 thin films by PLD — •Reshma Ravindran, Daniel Pfützenreuter, Julian Stöver, Klaus Irmscher, and Jutta Schwarzkopf — Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2 12489 Berlin

Barium stannate (BaSnO3) has gained a lot of attention during the last few years due to its high charge carrier mobility, which is higher than for most transparent conducting oxides and the highest reported for perovskite materials [1]. This makes BaSnO3 especially interesting for the use in electronic applications, e.g. field effect transistors. For single crystals, a mobility of 320 cm2/Vs at room temperature has been published. However, the mobility in epitaxial films is in the range of 70-100 cm2/Vs. This has initiated research efforts to improve structural and electrical properties of BaSnO3 thin films.

In our study, we report on epitaxially grown La-doped BaSnO3 (La concentration was 4 wt.-%) thin films on SrTiO3 substrates by pulsed laser deposition (PLD). We will show that PLD parameters like substrate temperature, target-to-substrate distance and laser spot size have to be carefully adjusted in order to obtain the formation of phase pure BaSnO3 thin films. Hall measurements will indicate that the charge carrier mobility is critically correlated with the structural quality of the epitaxial films analyzed by atomic force microscopy and x-ray diffraction. [1] H. J. Kim et al. Phys. Rev. B 86, 165205 (2012)