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HL: Fachverband Halbleiterphysik

HL 52: Focus Session: Functional Metal Oxides for Novel Applications and Devices I (joint session HL/DS)

HL 52.8: Vortrag

Mittwoch, 18. März 2020, 18:00–18:15, POT 81

Tuning the composition properties of SrTiO3 thin films grown by metal-organic vapor phase epitaxy (MOVPE) — •Aykut Baki, Julian Stöver, Toni Markurt, Carsten Richter, Klaus Irmscher, Martin Albrecht, and Jutta Schwarzkopf — Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2 12489 Berlin

SrTiO3 represents a prototype cubic perovskite and has several of interesting physical properties as for instance a high dielectric constant at room temperature and resistive switching behavior. MOVPE is employed as deposition method since it provides film growth close to the thermodynamic equilibrium and thus stoichiometric, defect-poor thin films with smooth surfaces and interfaces. In this study, epitaxial SrTiO3 films were successfully grown on 0.5 wt.% Nb-doped SrTiO3 substrates by using the metal-organic precursors Sr(tmdh)2-tetraglyme and Ti(iso-propoxid)2(tmdh)2 solved in dry toluene. It has been shown that the phase formation of phase-pure SrTiO3 is achieved by adjusting the substrate temperature to a range of 675 °C < TC < 725 °C. By varying the Sr/Ti ratio in the gas phase, the cation ratio in the SrTiO3 thin films has been precisely controlled. The structural quality of the grown films has been proved by high-resolution x-ray diffraction, atomic force microscopy and transmission electron microscopy. The insulating films have been tested for their dielectric properties by a Pt/SrTiO3/SrTiO3:Nb test-structure for temperatures between 20 K and 300 K. IV-curves have shown strong forming-less resistive switching.