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HL: Fachverband Halbleiterphysik
HL 58: Nitrides: Preparation and characterization I
HL 58.10: Vortrag
Donnerstag, 19. März 2020, 12:15–12:30, POT 112
Luminescence of GaN quantum dots on highly reflective deep UV Bragg mirrors — •Hannes Schürmann1, Christoph Berger1, Gao Kang2, Gordon Schmidt1, Peter Veit1, Frank Bertram1, Sebastian Metzner1, Armin Dadgar1, Jürgen Bläsing1, André Strittmatter1, Mark Holmes2, and Jürgen Christen1 — 1Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany — 2Institute of Industrial Science, The University of Tokyo, Japan
Towards the realization of room temperature stable and efficient single photon emitters, we present the structural and optical properties of GaN quantum dots (QDs) embedded in an AlGaN semi-microcavity with deep UV Bragg reflectors (DBR).
The structure was grown by MOVPE on AlGaN/sapphire template. Embedded in an AlGaN λ-cavity, the GaN QDs result from a 2 nm GaN layer with growth interruption. The DBR consists of 50 AlN/AlGaN pairs with 99.7 % reflectivity. Mesa structures were produced by reactive ion etching to investigate individual QDs.
Quasiresonantly excited QDs exhibit narrow emission lines between 269 - 273 nm with FWHM down to 0.9 meV at 8 K. Autocorrelation measurements reveal a clear antibunching with g(2)(0) values down to 0.34, which proofs single photon statistics of QD emission matching the DBR stopband.