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HL: Fachverband Halbleiterphysik

HL 58: Nitrides: Preparation and characterization I

HL 58.2: Vortrag

Donnerstag, 19. März 2020, 09:45–10:00, POT 112

Optoelectronic Characterization of GaN Nanowires on SiC-6H — •Andrea Wieland^1,2, Theresa Hoffmann¹, and Martin Stutzmann¹ — ¹Walter Schottky Institut and Physics Department, Technische Universität München, Garching, Germany — ²Ludwig-Maximilians-Universität München, Munich, Germany

Gallium nitride (GaN) nanowires (NWs) have gained interest for device fabrication due to their large surface-to-volume ratio, high crystal quality and optical waveguide characteristics. [1] As the polarity of GaN NWs influences the electronic properties at the heterointerfaces of the NWs and the substrate, polarity determination and control of the GaN NWs are key requirements to achieve desired NW-based device properties.

We have established the growth of GaN NWs on both polarities of hexagonal silicon carbide (SiC-6H) substrates by molecular beam epitaxy. Selective area growth of GaN NWs allows the variation of the NW dimensions and positions. To obtain optimal growth results the substrate temperature has been varied. Photoluminescence spectroscopy measurements at low temperatures have been performed for optical characterization of the GaN NW. Furthermore, the influence of the SiC-6H substrate polarity on the GaN NWs polarity has been investigated by means of KOH etching and contact potential difference measurements via Kelvin Probe Force Microscopy.

[1] J. Winnerl et al., J. Appl. Phys. 123, 203104 (2018)