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HL: Fachverband Halbleiterphysik
HL 58: Nitrides: Preparation and characterization I
HL 58.4: Vortrag
Donnerstag, 19. März 2020, 10:15–10:30, POT 112
Room temperature excitonic recombination processes in GaInN/GaN quantum wells at studied via carrier density dependent time-resolved photoluminescence — •S. Müllner1,2, P. Henning1,2, P. Horenburg1, H. Bremers1,2, U. Rossow1, and A. Hangleiter1, 2 — 1Institute of Applied Physics, Technische Universität Braunschweig, Germany — 2Laboratory for Emerging Nanometrology, Braunschweig, Germany
Our experimental results indicate excitonic recombination processes in nonpolar m-plane GaInN/GaN quantum wells (QW) even at high carrier densities. This follow-up study from polar c-plane GaInN/GaN, where a similar trend has been reported, was realized by time-resolved photoluminescence experiments at room temperature in which the excess carrier density, δn, is tuned by the laser fluence. Of particular interest is the regime of high carrier densities. Here, we find that the nonradiative lifetime τnr∼1/δn, evidencing excitonic Auger recombination. In addition, we observe a constant radiative lifetime, τr, with δn. In the model of free charge carrier recombination, this is expected for the low injection regime in which the background carrier density n0 ≫ δn, however, for the high injection regime, a τr∼1/δn dependence is predicted. Assuming excitonic recombination, τr(δn) is constant for high carrier densities, as we observe it, even further underlying excitonic recombination. We assure that we are in the high carrier density regime by comparing τnr(δn), where the transition between the low and high injection regime is signatured by an increase of τnr, associated with defect recombination.