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HL: Fachverband Halbleiterphysik

HL 58: Nitrides: Preparation and characterization I

HL 58.7: Vortrag

Donnerstag, 19. März 2020, 11:30–11:45, POT 112

Indium rich cubic group III Nitrides fabricated with molecular beam epitaxy — •Falco Meier, Dirk Reuter, and Donat J. As — Department of physics, Paderborn University

Indium Nitride (InN) and Indium Gallium Nitride (InGaN) are one of the most important semiconductor materials with a wide variety of applications, such as infrared LEDs, high-frequency and high temperature electronic devices. InN synthesized in the metastable cubic phase (c-InN) has received intensive attention because of its high electron mobility, the low phonon scattering, and the small direct band gap. Due to the high degree of symmetry in c-InN strong build-in electric fields are avoided. However, it is difficult to grow high-crystalline-quality InN because of its low dissociation temperature and the lack of lattice matched substrates. In this work we use a c-GaN buffer layer on a pseudo-substrate of 3C-SiC(001)/Si(001) for the growth of cubic InN and In-rich InGaN with plasma assisted molecular beam epitaxy. A set of parameters for the growth of phase-pure c-InN with a thickness of about 100 nm is determined. A smoothening of the Surface where the e-Beam of the reflection high-energy electron diffraction hits the Sample was verified with Atomic Force Microscopy. High resolution x-ray diffraction indicates that phase pure c-InN grow fully relaxed on the c-GaN buffer layers. The hexagonal phase content was below 5%. In-rich c-InGaN with nominal 10% and 20% Ga contents are also grown. Post growth characterization show that only a part of the nominal offered Ga content are incorporated into the c-InGaN compound indicating spinodal decomposition at the low growth temperatures.