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HL: Fachverband Halbleiterphysik

HL 59: THz and MIR physics in semiconductors

HL 59.10: Vortrag

Donnerstag, 19. März 2020, 12:15–12:30, POT 151

MBE-growth of p-doped InAs on undoped GaSb terahertz emitter — •Cyril Sadia-Salang¹, Rommel Jagus¹, Gerald Angelo Catindig², Alexander De Los Reyes², Armando Somintac², Arnel Salvador², and Elmer Estacio² — ¹Materials Science and Engineering Program, University of the Philippines Diliman, Quezon City 1101, The Philippines — ²Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman, Quezon City 1101, The Philippines

In this contribution, a terahertz (THz) wave surface emitter consists of a thin epitaxial layer of p-type InAs grown via molecular beam epitaxy on an undoped GaSb substrate. Multilayer buffer structures were grown prior to forming the p-InAs epilayer. These structures include 3 periods of 20-nm undoped GaAs and 260-nm undoped InAs, and 10 periods of InGaAs(3 nm)/GaAs(3 nm) superlattice as a way of minimizing surface roughness. The first 2 min of deposition of each GaAs buffer and InAs buffer proceeded with application of growth interruption. The second sample was capped with an n-doped GaAs to contribute to surface smoothening. The THz emission efficiency of p-InAs epilayers was evaluated using 1.55 µm femtosecond laser excitation in reflection geometry. The THz signal strength of the p-InAs epilayer is comparable to that of an InGaAs-based emitter. Additional improvement should be obtained by using thin InAs layer on GaSb in the transmission geometry.