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HL: Fachverband Halbleiterphysik
HL 59: THz and MIR physics in semiconductors
HL 59.4: Vortrag
Donnerstag, 19. März 2020, 10:15–10:30, POT 151
Mid-infrared induced transparency in boron-doped diamond — •Alexander Paarmann1, Sergey Pavlov2, Andreas Pohl3, Martin Wolf1, and Heinz-Wilhelm Hübers2,3 — 1Fritz Haber Institute of the Max Planck Society, Berlin, Germany — 2Institute of Optical Sensor Systems, German Aerospace Center (DLR), Berlin, Germany — 3Humboldt University Berlin, Berlin, Germany
The properties of deep impurity levels in elemental semiconductors have important implications for many applications, ranging from electronic and optoelectronic devices to superconductivity. Remarkably, boron dopants implanted into high-quality diamond single crystals result in exceptionally large binding energies leading to impurity state transitions around 350 meV, i.e., in the mid-infrared spectral range.
Facilitated by the localized nature of the electronic impurity levels, such systems typically show very strong nonlinear-optical interactions. This can be used, for instance, to probe the ultrafast dynamics to elucidate the relaxation mechanism of photo-excited states with pump-probe spectroscopy [1]. Moreover, as we show here, the bleaching of the fundamental impurity transition also leads to a dramatic fluence dependence of the transmission. This opens up many possibilities for using boron-doped diamond for nonlinear-optical applications.
[1] S.G. Pavlov, et al., Diamond & Related Materials 92, 259 (2019)