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HL: Fachverband Halbleiterphysik
HL 6: Heterostructures, interfaces and surfaces (joint session HL/O)
HL 6.1: Vortrag
Montag, 16. März 2020, 09:30–09:45, POT 151
Determining the band alignment of copper oxide-gallium oxide heterostructures — •Sebastian Leonard Benz, Martin Becker, Angelika Polity, Sangam Chatterjee, and Peter Jens Klar — Institute for Experimental Physics I and Center for Materials Research (LaMa), Justus Liebig University Giessen, Germany
The copper oxides cuprite (Cu2O) and tenorite (CuO) are ideal candidates for solar cells as they promise high conversion efficiencies according to the Shockley-Queisser limit[1]. However, both cannot readily be doped n-type, hampering charge-carrier extraction of the photoexcited electron-hole pairs. The combination of the copper oxides with gallium sesquioxide is considered an excellent heterojunction system for overcoming this challenge. In such a pn junction, the p-type copper oxide layer will act as absorber and the transparent n-type gallium sesquioxide as window layer. In these devices, the band alignment at the internal interface is crucial for the device performance. Here, we study the band alignments of different copper oxide-gallium sesquioxide heterostructures by X-ray photoelectron spectroscopy. Within the experimental margin of error, Cu2O-α-Ga2O3 appears to offer the most favourable band alignment for photovoltaic applications.
[1] William Shockley and Hans J. Queisser (March 1961). Journal of Applied Physics. 32 (3): 510*519.