Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 60: Perovskite and photovoltaics V (joint session HL/CPP)
HL 60.2: Talk
Thursday, March 19, 2020, 09:45–10:00, POT 251
Theoretical analysis of ultrathin Cu(In,Ga)Se2 solar cells with Zn(O,S) buffer layer — •gabin landry mbopda tcheum1,3, ariel teyou ngoupo1, narngar guirdjebaye1, soumaila ouedraogo2, and jean-marie b. ndjaka1 — 1University of Yaounde I, Yaounde, Cameroon — 2Université Joseph Ki-ZERBO, Ouagadougou, Burkina Faso — 3Friedrich-Schiller-Universität, Jena, Germany
The optimisation of Cd-free buffer layer, for CIGS based solar cells, appears as an ingenious way to reduce the absorber thickness without compromising the solar cell*s performance. Therefore, we discuss and present simulated electrical properties of CIGS solar cells with Zn(O,S) buffer layers. We present the electrical performance of this type of thin films solar cells with ultra thin absorber and buffer layers. However, as ultra thin absorber leads to increasing recombinations at the back contact, we introduced SnSe and a highly doped CIGS layer (known as p+-CIGS layer) as back surface field between the Mo layer and CIGS absorber. Here, we discussed their impact on the cell*s efficiency and on the band alignment.