Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 62: Focus Session: Functional Metal Oxides for Novel Applications and Devices II (joint session HL/DS)

HL 62.5: Talk

Thursday, March 19, 2020, 10:45–11:00, POT 81

Growth and characterization of Si delta-doped β-Ga₂O₃ layers by MOVPE — •Saud Bin Anooz, Raimund Grüneberg, Robert Schewski, Martin Albrecht, Andreas Fiedler, Klaus Irmscher, Zbigniew Galazka, Günter Wagner, and Andreas Popp — Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany

Si delta-doped β-Ga₂O₃ layers have been grown on (100) and (010) β-Ga₂O₃ substrates by MOVPE. AFM images of the grown layer on (010) oriented substrate show 2D island growth, while for layers grown on (100) with 6o miscut angle substrate step flow growth mode has been found resulting in a lower surface roughness for the (100) surface compared to (010). The amount of Si incorporated into the grown layers as well as the shape of the interface were studied by secondary ion mass spectrometry (SIMS). The SIMS depth profile for the Si delta-doped layer grown on a (010) substrate shows a gradual transition from the high Si doped to the unintentionally doped regime. However, the Si depth profile of the layer grown on (100) 6^∘ off substrate shows sharp interfaces between the high and low doped regions, a clear advantage with regard to later devices. This could be explained by the surface morphology of the grown layers on (010) and (100) substrates.