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HL: Fachverband Halbleiterphysik
HL 62: Focus Session: Functional Metal Oxides for Novel Applications and Devices II (joint session HL/DS)
HL 62.7: Vortrag
Donnerstag, 19. März 2020, 12:00–12:15, POT 81
Growth Window, Solubility Limit and Material Properties of κ-(AlxGa1−x)2O3 PLD thin films — •A. Hassa1, C. Wouters2, M. Kneiss1, P. Storm1, H. von Wenckstern1, D. Splith1, C. Sturm1, M. Albrecht2, and M. Grundmann1 — 1Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, Germany
The orthorhombic polymorph of Ga2O3, namely κ, is of increasing interest because of its predicted large polarization of 23 µ C/cm2 [1] rendering it well suited for possible usage e.g. in HEMT’s.
The high bandgap of about 5 eV [2] can be enlarged by alloying with Al2O3 enabling such heterostructure-based devices.
We present κ-(AlxGa1−x)2O3 thin films grown on (00.1)Al2O3 by tin-assisted pulsed laser deposition (PLD) [2]. For some thin films a homogeneous target with a defined composition and for an 2 inch in diameter thin film a two-fold PLD target consisting of Ga2O3/Al2O3 semicircular segments were utilized to grow a sample with laterally continuous composition spread [3].
Al content, growth rates and the occurrence of single phase κ-(AlxGa1−x)2O3 depends systematically on growth conditions.
Further, we present the dependence of structural and optical properties on alloy composition. The maximum observed Al incorporation in the κ-phase was x=0.46 with a bandgap of 5.85 eV.
[1] M. B. Maccioni et al., Appl. Phys. Express 9, 04102 (2016).
[2] M. Kneiß et al., APL Materials 7, 022516 (2019).
[3] H. von Wenckstern et al., CrystEngComm 15, 10020 (2013).