Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 62: Focus Session: Functional Metal Oxides for Novel Applications and Devices II (joint session HL/DS)

HL 62.8: Vortrag

Donnerstag, 19. März 2020, 12:15–12:30, POT 81

Epitaxy of κ-(Al,Ga)₂O₃ heterostructures and superlattices by VCCS-PLD — •Philipp Storm¹, Max Kneiss¹, Thorsten Schultz², Daniel Splith¹, Holger von Wenckstern¹, Norbert Koch², Michael Lorenz¹, and Marius Grundmann¹ — ¹Universität Leipzig, Felix-Bloch Institut für Festkörperphysik — ²Humboldt Universität zu Berlin, Institut für Physik

Ga₂O₃ is a wide band gap semiconductor with pronounced polymorphism. The thermodynamically stable and therefore most often investigated polymorph is the monoclinic β-phase. However, the metastable, orthorhombic κ-phase gained significant interest due to its high predicted spontaneous polarization of 23 µC/cm² [1]. Exploiting the polarization differences at κ-Ga₂O₃/CaCO₃ [2] or κ-Ga₂O₃/κ-(Al,Ga)₂O₃ heterointerfaces could allow for the formation of 2DEGs with high carrier densities, crucial for QWIP or HEMT devices. Nevertheless, only little is known about κ-(Al,Ga)₂O₃ heterostructures [3]. In this work, VCCS-PLD (vertical continuous composition spread pulsed laser deposition) [4] was utilized for the growth of κ-(Al,Ga)₂O₃ heterostructures and superlattices that were investigated regarding structural, morphological and optical properties to evaluate their potential for device applications.

[1] M. B. Maccioni et al. : Appl. Phys. Express 9, 041102 (2016)

[2] S. B. Cho et al. : Appl. Phys. Lett. 112, 162101 (2016)

[3] P. Storm et al. : APL Mater. 7, 111110 (2019)

[3] M. Kneiß et al. : ACS Comb. Sci. 20, 643 (2018)