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HL: Fachverband Halbleiterphysik
HL 64: Poster II
HL 64.20: Poster
Donnerstag, 19. März 2020, 10:00–13:00, P1A
1550 nm quantum dots grown in an InGaAs well — •Marcel Schmidt1, Aimeric Courville2, Andreas D. Wieck1, and Arne Ludwig1 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany — 2CNRS, Université Côte d’Azur, CRHEA, France
Self-assembled quantum dots (QDs) emitting at 1.55 µm are very promising for future optical fiber transmitted quantum information exchange as the attenuation in the optical fiber has an absolute minimum at this wavelength. The QDs are nearly ideal sources for single indistinguishable photons or entangled photon pairs which can be used for quantum information purposes like quantum key distribution or quantum repeaters. We present first results of QDs grown in an asymmetric InGaAs quantum well1. The QDs are grown on a pseudomorphic InGaAs layer. By stopping the rotation during QD growth, both the InAs quantity and the deposition rate are modified. As a result, the QD density and morphology varies along the growth gradient. A further layer of InGaAs, with a higher In content than the subsequent layer, is applied on top of the QDs. Photoluminescence maps preformed on the so embedded QDs indicate regions with lower intensity along the gradient. AFM measurements taken from these spots show a higher density of ripened islands and thus potentially more dislocations serving as non-radiative recombination channels.
1.) Zhang et al., 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser. Scientific reports 2, 477 (2012).