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HL: Fachverband Halbleiterphysik

HL 64: Poster II

HL 64.32: Poster

Donnerstag, 19. März 2020, 10:00–13:00, P1A

Photoluminescene Spectroscopy of Self-Assembled InAs/GaAs Quantum Dots grown in a Density-Modulated Pattern by Molecular Beam Epitaxy — •Peter F. Zajac, Nikolai Bart, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, 44801 Bochum

Self-assembled InAs/GaAs Quantum Dots (QDs) with a modulation of QD density perpendicular to the growth direction were grown by molecular beam epitaxy (MBE). The modulation corresponds to a striped pattern, whose properties can be modified by varying the growth parameters of the buffer layers underneath the QDs. It is proposed that the pattern is caused by the deposition profile of the molecular beam causing the formation of atomically rough and smooth surface areas which lead to an earlier nucleation of QDs at rougher regions in comparison to flat surfaces. With Photoluminescence Spectroscopy (PL) measurements at room temperature and 100 K the properties of such grown QDs in the different regimes of QDs density are studied in order to understand the growth process and to tune the QD emission.