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HL: Fachverband Halbleiterphysik

HL 64: Poster II

HL 64.48: Poster

Donnerstag, 19. März 2020, 10:00–13:00, P1A

Negatively charged silicon vacancies VSi^- in 4H-silicon carbide for quantum applications — •Julius Röwe and Martin S. Brandt — Walter Schottky Institut and Physik-Department, Technische Universität München, Garching, Germany

Since many, in particular bipolar electronic devices can be fabricated from silicon carbide, color centers such as the negatively charged silicon vacancy VSi^- are intensively studied in this material for possible applications in quantum-based information and sensing. However, to make full use of the technological advantage, an efficient spin-to-current conversion is crucial for the coherent electrical read-out of these color centers. We study the fundamental properties of VSi^- in 4H-SiC by photoconductivity measurements under near-resonant illumination and observe two-photon excitation of the ground state into the conduction band. Raster scanning of the detection volume allows spatial and lateral resolution of the photoconductivity in the micrometer range and an understanding of the properties of the electrical contacts to the SiC photoconductor. In addition, we will discuss the possibility to locally generate VSi^- e.g. by helium ions.