Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 64: Poster II

HL 64.9: Poster

Thursday, March 19, 2020, 10:00–13:00, P1A

Resolving the 1D subband structure of wurtzite GaAs wires by inelastic light scattering and PLE — •Sebastian Meier, Paulo de Faria Junior, Ferdinand Haas, Florian Dirnberger, Viola Zeller, Jaroslav Fabian, Dominique Bougeard, and Christian Schüller — Universität Regensburg, 93040 Regensburg, Germany

Resonant Raman scattering and photoluminescence excitation (PLE) measurements have been performed to measure the subband energies of wurtzite GaAs nanowires. Our wires were grown by MBE using the VLS method and have a GaAs core of down to 25  nm thickness which is protected by an AlGaAs shell. For laser excitation, we use a Ti:Sapphire laser, which can be tuned continuously in the energy region of the band gap.

In our Raman experiment, we find a number of peaks which are resonantly enhanced at different excitation energies. According to selection rules and resonance behaviour we interpret the peaks to stem from intersubband excitations of photoexcited electrons. Furthermore, we are able to identify the first excited absorption peak by PLE. Finally, we provide a theoretical account of the measured peaks considering realistic k·p calculations for the nanowire band structure.