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HL: Fachverband Halbleiterphysik

HL 65: 2D Materials and their Heterostructures III (joint session DS/HL)

HL 65.1: Vortrag

Donnerstag, 19. März 2020, 11:00–11:15, CHE 89

Controllable growth of few-layer graphene — •Victor Aristov^1,2, Alexander Chaika^2,3, Olga Molodtsova^1,4, Sergey Babenkov^1,5, Dmitrii Potorochin^1,4,6, Andrea Locatelli⁷, Tevfik Mentes⁷, Alessandro Sala⁷, and Dmitry Marchenko⁸ — ¹Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — ²Institute of Solid State Physics of the Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation — ³CRANN, School of Physics, Trinity College Dublin, Dublin 2, Ireland — ⁴ITMO University, 197101 Saint Petersburg, Russian Federation — ⁵Institut fuer Physik, Johannes Gutenberg-Universita*t, D-55099 Mainz, Germany — ⁶Institute of Experimental Physics, TU Bergakademie Freiberg, D-09599 Freiberg, Germany — ⁷Elettra Sincrotrone Trieste, I-34149 Basovizza, Trieste, Italy — ⁸Helmholtz-Zentrum Berlin fuer Materialien und Energie, D-12489 Berlin, Germany

Utilizing vicinal SiC/Si(001) wafers one can synthesize self-aligned graphene nanoribbons that exhibit energy transport gap on the order of 1 eV, large positive in-plane magnetoresistance, and the potential to work as a spin filter, opening opportunities for electronic and spintronic applications. This work demonstrates the capabilities to control the lattice and boundary orientations and the layer thickness in-situ, during the few-layer graphene synthesis in an ultra-high vacuum [1]. Supported by the RFBR (Grant Nos. 17-02-01139, 17-02-01291). [1] V.Yu.Aristov et al., ACS Nano 13, 526 (2019)