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HL: Fachverband Halbleiterphysik

HL 66: Thin Oxides and Oxide Layers II (joint session DS/HL)

HL 66.1: Vortrag

Donnerstag, 19. März 2020, 11:00–11:15, CHE 91

Structural, Optical and Electrical Properties of Indium Tungsten Oxide upon High Temperature Annealing — •Dorothee Menzel and Lars Korte — Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin, Germany

High work function metal oxides, such as tungsten oxide (WOx) have recently been investigated as charge selective p-contacts for silicon heterojunction solar cells: They provide a higher optical transparency, and due to their high work function (WF) it is expected that they can improve the cell's fill factor due to a more efficient carrier separation. However, WOx suffers from a rather poor conductivity. Indium oxide (InOx), on the other hand, has a moderate WF but a much higher conductivity. We vary the ratio of In-to-W oxide by thermal co-evaporation, spanning the full range from pure WOx to pure InOx and search for a tradeoff of high WF and high conductivity. Using in-situ (X-ray and UV) PES and surface photovoltage measurements, we found a pronounced decrease of the WF from 6.3eV for pure WOx down to 4.5eV for 40% of InOx-content in the InWOx mixture. This was accompanied by a decrease of the band bending in the c-Si substrate by 200meV [1]. Further studies focused on the material properties, such as optical, electrical and structural properties of indium tungsten oxide thin films on glass. We will discuss the changes in these properties with changing In-to-W ratio and upon high temperature annealing up to 700°C.

[1] D. Menzel et al., Appl. Phys. Lett., 112, 1-13, 2018.